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dc.contributor.authorSharma, Vipin Kumar
dc.contributor.authorParveen, P.
dc.contributor.authorAnsari, Mohammad Samar
dc.date.accessioned2021-02-01T11:09:17Z
dc.date.available2021-02-01T11:09:17Z
dc.date.copyright2020
dc.date.issued2020-02
dc.identifier.citationSharma, V., Parveen, T., Ansari,M.S. (2020). Four quadrant analog multiplier based memristor emulator using single active element. AEU - International Journal of Electronics and Communications. 130: 153575. https://doi.org/10.1016/j.aeue.2020.153575en_US
dc.identifier.issn1434-8411
dc.identifier.urihttp://research.thea.ie/handle/20.500.12065/3525
dc.description.abstractThis paper presents a novel Four Quadrant Analog Multiplier (FQAM) circuit and its applications using a single active element Current Differencing Transconductance Amplifier (CDTA) and two NMOS. This circuit has a cascadability feature as it produces current and voltage outputs at high and low impedance ports, respectively. It offers additional features such as resistor-less realization, operability in voltage and trans-conductance mode, and configurable structure. Further, the FQAM circuit is configured to develop a memristor emulator based on the proposed mathematical analogy. The proposed memristor circuit contains active elements (one CDTA, two NMOS, and one Inverting Voltage buffer) and only one grounded capacitor. It offers tunability using the transconductance gain of the CDTA block. Also, the proposed memristor emulator circuit doesn’t contain any additional multiplier block. The emulator circuit can be operated in both the Incremental and the Decremental mode of memristance variation. The results demonstrate the non-volatile property as well as hysteresis behavior for the wide frequency range. The effects of statistical variation in passive component, threshold voltage, and aspect ratios on the proposed circuits using Monte-Carlo simulation have been estimated. Also, the impact of non-idealities and the parasitic effects of the CDTA on the proposed circuits are investigated. In last, the capacitor-less version of the memristor emulator and its hysteresis characteristics have been demonstrated. The simulation results obtained using HSPICE, are agreed well with the theoretical analysis.en_US
dc.formatPDFen_US
dc.language.isoengen_US
dc.publisherElsevieren_US
dc.relation.ispartofAEU - International Journal of Eelctronics and Communicationsen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectMemristor emulatoren_US
dc.subjectFQAMen_US
dc.subjectCDTAen_US
dc.subjectAmplitude modulationen_US
dc.subjectNon-volatilityen_US
dc.titleFour quadrant analog multiplier based memristor emulator using single active elementen_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.contributor.affiliationAthlone Institute of Technologyen_US
dc.contributor.sponsorThis research is supported by Visvesvaraya Ph.D scheme under the Ministry of Electronics & Information Technology (MeitY) Government of Indiaen_US
dc.description.peerreviewyesen_US
dc.identifier.doihttps://doi.org/10.1016/j.aeue.2020.153575en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-4368-0478en_US
dc.identifier.volume130en_US
dc.rights.accessrightsinfo:eu-repo/semantics/openAccessen_US
dc.subject.departmentSoftware Research Institute AITen_US
dc.type.versioninfo:eu-repo/semantics/submittedVersionen_US


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Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivatives 4.0 International