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dc.contributor.authorKumaravel, Vignesh
dc.contributor.authorRhatigan, Stephen
dc.contributor.authorMathew, Snehamol
dc.contributor.authorBartlett, John
dc.contributor.authorNolan, Michael
dc.contributor.authorHinder, Steven J.
dc.contributor.authorSharma, Preetam K.
dc.contributor.authorSingh, Anukriti
dc.contributor.authorByrne, J. Anthony
dc.contributor.authorHarrison, John
dc.contributor.authorPillai, Suresh C.
dc.date.accessioned2021-03-16T15:57:36Z
dc.date.available2021-03-16T15:57:36Z
dc.date.copyright2019-08-29
dc.date.issued2019
dc.identifier.citationKumaravel, V., Rhatigan, S., Mathew, S., Bartlett, J., Nolan, M., Hinder, S.J., Sharma, P.K., Singh, A., Byrne, J.A., Harrison, J. and Pillai, S.C. (2019) "Indium-Doped TiO2 Photocatalysts with High-Temperature Anatase Stability", The Journal of Physical Chemistry C, 123 (34), pp.21083-21096. DOI: https://doi.org/10.1021/acs.jpcc.9b06811.en_US
dc.identifier.urihttp://research.thea.ie/handle/20.500.12065/3546
dc.description.abstractThe thermal stability of anatase titanium dioxide (TiO2) is a prerequisite to fabricate photocatalyst coated indoor building materials for use in antimicrobial and self-cleaning applications under normal room light illumination. Metal doping of TiO2 is an appropriate way to control the anatase to rutile phase transition (ART) at high processing temperature. In this present work, ART of indium (In) doped TiO2 (In-TiO2) was investigated in detail in the range of 500 °C – 900 °C. In-TiO2 (In mol % = 0 to 16) was synthesized via a modified sol-gel approach. These nanoparticles were further characterized by means of powder X-ray diffraction (XRD), Raman, photoluminescence (PL), transient photocurrent response, and X-ray photoelectron spectroscopy (XPS) techniques. XRD results showed that the anatase phase was maintained up to 64 % by 16-mol % of In doping at 800 °C of calcination temperature. XPS results revealed that the binding energies of Ti4+ (Ti 2p1/2 and Ti 2p3/2) were red-shifted by In doping. The influence of In doping on the electronic structure and oxygen vacancy formation of anatase TiO2 was studied using density functional theory corrected for on-site Coulomb interactions (DFT+U). First principles results showed that the charge compensating oxygen vacancies form spontaneously at sites adjacent to the In dopant. DFT+U calculations revealed the formation of In - 5s states in the band gap of the anatase host. The formation of In2O3 at the anatase surface was also examined using a slab model of the anatase (101) surface modified with a nanocluster of composition In4O6. The formation of a reducing oxygen vacancy also has a moderate energy cost and results in charge localisation at In ions of the supported nanocluster. PL and photocurrent measurements suggested that the charge carrier recombination process in TiO2 was reduced in the presence of In dopant. The photocatalytic activity of 2 % In-TiO2 calcined at 700 °C is more comparable with that of pure anatase.en_US
dc.formatapplication/pdfen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.ispartofJournal of Physical Chemistry Cen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectPhotocatalysisen_US
dc.subjectNanomaterialsen_US
dc.subjectTitanium dioxideen_US
dc.subjectDoped semiconductorsen_US
dc.titleIndium-Doped TiO2 Photocatalysts with High-Temperature Anatase Stability /en_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.typeinfo:eu-repo/semantics/preprinten_US
dc.contributor.sponsorRenewable Engine project - European Union’s INTERREG VA Programme and Department for the Economy and Department of Jobs, Enterprise and Innovation; Science Foundation Ireland; Invest Northern Irelanden_US
dc.description.peerreviewnoen_US
dc.identifier.doi10.1021/acs.jpcc.9b06811en_US
dc.identifier.eissn1932-7455
dc.identifier.endpage21096en_US
dc.identifier.issue34en_US
dc.identifier.startpage21083en_US
dc.identifier.urlhttps://pubs.acs.org/doi/full/10.1021/acs.jpcc.9b06811en_US
dc.identifier.volume123en_US
dc.rights.accessrightsinfo:eu-repo/semantics/openAccessen_US
dc.subject.departmentDept of Life Sciences, ITSen_US
dc.type.versioninfo:eu-repo/semantics/submittedVersionen_US
dc.relation.projectid(M-ERA.Net 2), Horizon 2020 grant agreement number 685451; SFI Grant Number SFI/16/M-ERA/3418 (RATOCAT); NI (R&D project Novel Dielectrics RD071392).en_US


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Attribution-NonCommercial-NoDerivatives 4.0 International
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